Skip to main content Accessibility help
×
Home

III-N Epitaxial Growth for Nitride Devices

  • Russell Dupuis (a1), Theodore Chung (a2), Wonseok Lee (a3), Peng Li (a4), Jae Limb (a5), Jae-Hyun Ryou (a6) and Dongwon Yoo (a7)...

Abstract

Various GaN-based device structures were grown on (0001) sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition. The device structures of this study include a variety of p-n junction-based devices, such as InGaN/GaN multiple-quantum-well green light emitting diodes, GaN p-i-n vertical rectifiers, and GaN/InGaN heterojunction bipolar transistors. This paper describes the epitaxial growth and device performance characteristics of these device structures. We have developed state-of-of-the-art growth techniques for the materials that are critical for high-performance electronic and optoelectronic devices. High-performance InGaN HBTs, high-voltage GaN rectifiers and long-wavelength green LEDs have been epitaxially grown, fabricated, and characterized. The details of the material growth, device fabrication, and device characterization will be presented.

Copyright

References

Hide All
1 Obtained from Epichem Inc., Haverhill, MA.
2 LayTec EpiTT supplied by LayTec, Berlin, Germany.
3 Perry, W. G., Zheleva, T., Bremser, M. D., Davis, R. F., Shan, W., and Song, J. J., J. Electron. Mater. 26, 224 (1997).
4 Chen, C., Liu, H., Steigerwald, D., Imler, W., Kuo, C., and Craford, M., J. Electron. Mater. 25, 1004 (1996).
5 Han, J., Figiel, J., Crawford, M., Banas, M., Bartram, M., Biefeld, R., Song, Y. K., and Nurmikko, A., J. Cryst. Growth 195, 291 (1998).
6 Makimoto, T., Kumakura, K., and Kobayashi, N., Appl. Phys. Lett. 79, 380 (2001).
7 Makimoto, T., Kumakura, K., and Kobayashi, N., Appl. Phys. Lett. 83, 1035 (2002).
8 Makimoto, T., Yamauchi, Y., and Kumakura, K., Appl. Phys. Lett. 84, 1964 (2004).
9 Makimoto, T., Kumakura, K., and Kobayashi, N., J. Cryst. Growth 221, 350 (2000).
10 Kumakura, K., Makimoto, T., Kobayashi, N., Jpn. J. Appl. Phys 39, L337 (2000).
11 McCarthy, L. S., Kozodoy, P., Rodwell, M. J. W., DenBaars, S. P., and Mishra, U. K., IEEE Electron Device Lett. 20, 277 (1999).
12 Huang, J. J., Hattendorf, M., Feng, M., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Chowdhury, U.. Zhu, T. G., Kwon, H. K., and Dupuis, R. D., IEEE Electron Device Lett. 22, 157 (2001).
13 Kroemer, H., J. Vac. Sci. Technol. B 1, 126 (1983).
14 Chung, T., Keogh, D., Chukung, B., Limb, J., Ryou, J.-H., Lee, W., Li, P., Yoo, D., Zhang, X.-B., Zakharov, D., Lilienthal-Weber, Z., Asbeck, P., Feng, M., Shen, S.-C., and Dupuis, R. D., Electronic Material Conference, Santa Barbara, CA (2005); in press in J. Electron Mater‥
15 Chung, T., Limb, J., Yoo, D., Ryou, J.-H., Lee, W., Shen, S.-C., Dupuis, R. D., Kung, C., Feng, M., Keogh, D., and Asbeck, P., submitted to Appl. Phys. Lett. (2005).
16 Trivedi, M. and Shenai, K., J. Appl. Phys. 85, 6889 (1999).
17 Zeisel, R., Bayerl, M. W., Goennenwein, S. T. B., Dimitrov, R., Ambacher, O., Brandt, M. S., and Stutzmann, M., Phys. Rev. B 61, R16283 (2000).
18 Lahréche, H., Vennéguès, P., Vaille, M., Beaumont, B., Laügt, M., Lorenzini, P., and Gibart, P., Semicond. Sci. Technol. 14, L33 (1999).
19 Vennéguès, P. and Lahrèche, H., Appl. Phys. Lett. 77, 4310 (2000).
20 Moran, B., Hansen, M., Craven, M., Speck, J., and DenBaars, S., J. Crystal Growth 221, 301 (2000).
21 Kröger, R., Einfeldt, S., Chierchia, R., Reitmeier, Z., Davis, R., and Liu, Q., J. Appl. Phys. 97, 083501 (2005).
22 Petersson, A., Gustafsson, A., Samuelson, L., Tanaka, S., and Aoyagi, Y., MRS Internet J. Nitride Semicond. Res. 7, 5 (2002).
23 Krames, M., DoE Workshop on Solid State Lighting, 2003.
24 McCluskey, M. D., Romano, L. T., Krusor, B. S., Johnson, N. M., Suski, T., and Jun, J., Appl. Phys. Lett. 73, 1281 (1998).
25 McCluskey, M. D., Romano, L. T., Krusor, B. S., Bohr, D. P., Johnson, N. M., and Brennan, S., Appl. Phys. Lett. 72, 1730 (1998).
26 Chou, C. C., Lee, C. M., and Chyi, J. I., Appl. Phys. Lett. 78, 314, (2001).
27 Götz, W., Johnson, N. M., Walker, J., Bour, D. P., and Street, R. A., Appl. Phys. Lett. 68, 667 (1996).
28 Kitamura, S., Hiramatsu, K., and Sawaki, N., Jpn. J. Appl. Phys. 34, L184 (1995).
29 Kumakura, K., Makimoto, T., and Kobayashi, N., J. Crystal Growth 221, 267 (2000).
30 Kumakura, K., Makimoto, T., and Kobayashi, N., J. Appl. Phys. 93, 3370 (2003).
31 Lee, S.-N., Sakong, T., Lee, W., Paek, H., Son, J., Yoon, E., Nam, K., and Park, Y., J. Crystal Growth 261, 249 (2004).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed