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III-N Epitaxial Growth for Nitride Devices

  • Russell Dupuis (a1), Theodore Chung (a2), Wonseok Lee (a3), Peng Li (a4), Jae Limb (a5), Jae-Hyun Ryou (a6) and Dongwon Yoo (a7)...


Various GaN-based device structures were grown on (0001) sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition. The device structures of this study include a variety of p-n junction-based devices, such as InGaN/GaN multiple-quantum-well green light emitting diodes, GaN p-i-n vertical rectifiers, and GaN/InGaN heterojunction bipolar transistors. This paper describes the epitaxial growth and device performance characteristics of these device structures. We have developed state-of-of-the-art growth techniques for the materials that are critical for high-performance electronic and optoelectronic devices. High-performance InGaN HBTs, high-voltage GaN rectifiers and long-wavelength green LEDs have been epitaxially grown, fabricated, and characterized. The details of the material growth, device fabrication, and device characterization will be presented.



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