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Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

  • K. Saarinen (a1), T. Laine (a1), K. Skog (a1), J. Oila (a1), P. Hautojärvi (a1), K. Rakennus (a2), P. Uusimaa (a2), A. Salokatve (a2) and M. Pessa (a2)...

Abstract

We show how positron annihilation can distinguish vacancies in the different sublattices of a compound semiconductor by performing experiments in ZnSxSe1−x and Mgy Zn1−ySxSe1−x layers. We identify the Se vacancies (Vse) in N-doped and the Zn vacancies (Vzn) in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving VSe is neutral or negative in the p-type alloys, suggesting that the Se vacancy is complexed with an acceptor. The concentration of the VSe complexes is high (≥ 1018 cm−3 ), indicating that their role is important in the electrical compensation of p-type ZnSxSe1−x and MgyZn1−y SxSe1−x.

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Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

  • K. Saarinen (a1), T. Laine (a1), K. Skog (a1), J. Oila (a1), P. Hautojärvi (a1), K. Rakennus (a2), P. Uusimaa (a2), A. Salokatve (a2) and M. Pessa (a2)...

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