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Identification of the 0.15 eV Donor Defect in Bulk GaAs

  • Z-Q. Fang (a1), J. W. Hemsky (a1) and D. C. Look (a1)

Abstract

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

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