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Identification of Impurities and Defects in Semiconductors by Optical Spectroscopy

Published online by Cambridge University Press:  28 February 2011

M. S. Skolnick
M. S. Skolnick*
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcestershire, UK
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Abstract

A review is given of the information that can be obtained on defect centers in semiconductors by optical spectroscopy. Particular emphasis is given to donor and acceptor identification, and symmetry determination of transition metal and axial defect-complex centers. The information that can be obtained from isotope doping effects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 27
Copyright
Copyright © Materials Research Society 1985

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