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Hydrogen-Related Electron Traps in GaAs and their Relation to Crystal Stoichiometry

Published online by Cambridge University Press:  26 February 2011

Tatsuyuki Shinagawa  and
Tsugunori Okumura
Tatsuyuki Shinagawa
Affiliation:
Department of Electronics and Information Engineering, Tokyo Metropolitan University 1–1, Minami-ohsawa, Hachiohji, Tokyo 192–03, Japan
Tsugunori Okumura
Affiliation:
Department of Electronics and Information Engineering, Tokyo Metropolitan University 1–1, Minami-ohsawa, Hachiohji, Tokyo 192–03, Japan
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Abstract

Deep-level formation upon plasma hydrogenation has been studied with n-GaAs grown by various methods. Four electron traps (EH0-EH3) were generated in As-rich n-GaAs crystals. No electron traps were observed in the LPE layer before and after hydrogenation. The hydrogen as well as excess arsenic defects are responsible for the formation of these deep levels. Two of the generated levels in our study, EH0/EH2, exhibit metastability and are identical to the M3/M4 levels reported by Buchwald et al. It can be speculated that both diffused hydrogen and already existing As antisite defects are responsible for the generation of the metastable defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 447
Copyright
Copyright © Materials Research Society 1995

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References

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