Skip to main content Accessibility help
×
Home

Hydrogenation of Gallium Nitride

  • M. S. Brandt (a1), N. M. Johnson (a1), R. J. Molnar (a2), R. Singh (a2) and T. D. Moustakas (a2)...

Abstract

A comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

Copyright

References

Hide All
[1] Hydrogen in Semiconductors, edited by Pankove, J. I. and Johnson, N. M. (Academic, San Diego, 1991).
[2] Wolk, J. A., Ager, J. W. III, Duxstad, K. J., Hailer, E. E., Taskar, N. R., Dorman, D. R., and Olego, D. J., Appl. Phys. Lett. 63, 2756 (1993).
[3] Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).
[4] Moustakas, T. D. and Molnar, Rt. J., Mat. Res. Soc. Conf. Proc. 281, 753 (1993).
[5] Pankove, J. I. and Hutchby, J. A., J. Appl. Phys. 47, 5387 (1976).
[6] Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992), S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appi. Phys. 31, 1258 (1992).
[7] Ager, J. and Götz, W., private communication.
[8] Vechten, J. A. Van, Zook, J. D., Horning, R. D., and Goldenberg, B., Jpn. J. Appi. Phys. 31, 3662 (1992).

Related content

Powered by UNSILO

Hydrogenation of Gallium Nitride

  • M. S. Brandt (a1), N. M. Johnson (a1), R. J. Molnar (a2), R. Singh (a2) and T. D. Moustakas (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.