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Hydrogenation of Gallium Nitride

Published online by Cambridge University Press:  22 February 2011

M. S. Brandt ,
N. M. Johnson ,
R. J. Molnar ,
R. Singh  and
T. D. Moustakas
M. S. Brandt
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
R. J. Molnar
Affiliation:
Department of Electrical, Computer, and Systems EngineeringBoston University, Boston, MA 02215
R. Singh
Affiliation:
Department of Electrical, Computer, and Systems EngineeringBoston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Department of Electrical, Computer, and Systems EngineeringBoston University, Boston, MA 02215
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Abstract

A comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 341
Copyright
Copyright © Materials Research Society 1994

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References

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