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Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

  • Jung Mok Jun (a1), Kyu Chang Park (a1), Sung Ki Kim (a1), Kyung Ha Lee (a1), Mi Kyung Chu (a1), Min Koo Han (a2), Young Hee Lee (a3) and Jin Jang (a1)...

Abstract

We have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.

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Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

  • Jung Mok Jun (a1), Kyu Chang Park (a1), Sung Ki Kim (a1), Kyung Ha Lee (a1), Mi Kyung Chu (a1), Min Koo Han (a2), Young Hee Lee (a3) and Jin Jang (a1)...

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