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Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

Published online by Cambridge University Press:  26 February 2011

R.R. Bilyalov  and
B.M. Abdurakhmanov
R.R. Bilyalov
Affiliation:
Institute of Electronics, Department of Technical Electronics, Uzbek Academy of Sciences, Academgorodok, Tashkent 700143, Uzbekistan
B.M. Abdurakhmanov
Affiliation:
Institute of Electronics, Department of Technical Electronics, Uzbek Academy of Sciences, Academgorodok, Tashkent 700143, Uzbekistan
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Abstract

The effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.

Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 411
Copyright
Copyright © Materials Research Society 1995

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