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Hydrogen On Semiconductor Surfaces

  • J. A. Schaefer (a1), T. Balster (a1), V. Polyakov (a1), U. Rossow (a1), S. Sloboshanin (a1), U. Starke (a1) and F. S. Tautz (a1)...

Abstract

We review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.

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Hydrogen On Semiconductor Surfaces

  • J. A. Schaefer (a1), T. Balster (a1), V. Polyakov (a1), U. Rossow (a1), S. Sloboshanin (a1), U. Starke (a1) and F. S. Tautz (a1)...

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