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Hydrogen Local Vibrational Modes in Compound Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. D. Mccluskey
M. D. Mccluskey*
Affiliation:
University of California and Lawrence Berkeley National Laboratory, MS 2–200, 1 Cyclotron Rd., Berkeley, CA 94720
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Abstract

Local vibrational mode (LVM) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopanthydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example, hydrogen binds to a host nitrogen which is adjacent to the magnesium acceptor. In GaP and ZnSe, it has been demonstrated that the temperature dependent shifts of LVM's are proportional to the lattice thermal energy, a consequence of the anharmonic coupling of the local mode to acoustical phonons.

Large hydrostatic pressures have been applied to semiconductors to probe the vibrational properties of hydrogen-related complexes. In GaAs, the pressure dependent shifts of the 12C-H and 13C-H stretch modes have positive curvatures, while the shift of the S-H stretch mode has a negative curvature. This may be related to the fact that in the bond-centered C-H complex, the hydrogen is compressed between the carbon acceptor and one gallium host atom, whereas in the S-H complex, the hydrogen occupies an interstitial position and is not crowded by neighboring atoms. If these trends are general, then hydrostatic pressure may be a powerful tool in determining the position of the hydrogen atom(s) in a complex.

In AISb. pressure was utilized to resolve a mystery as to why the Se-D complex gives rise to one stretch mode peak while the Se-H stretch mode splits into three peaks. This anomalous splitting is explained in terms of a new resonant interaction between the stretch mode and combination modes involving a wag mode harmonic and extended lattice phonons. The interaction gives rise to vibrational modes with both localized and extended components. When the temperature or hydrostatic pressure is varied, the modes exhibit anti-crossing behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 217
Copyright
Copyright © Materials Research Society 1998

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