Skip to main content Accessibility help
×
Home

Hydrogen Ion Beam Smoothening of Oxygen Roughened Ge(001) Surfaces

  • K. M. Horn (a1), E. Chason (a1), J. Y. Tsao (a1) and S. T. Picraux (a1)

Abstract

A smooth Ge(001) surface can be severely roughened by chemical etching with oxygen gas and then returned to its original smoothness by exposure to hydrogen. The rate of recovery of the surface depends strongly on temperature, as well as on whether the hydrogen is introduced as a low energy ion beam or simply as a gas. The roughness induced in the surface by etching is “locked-in” after removal of the oxygen gas through pinning of ledges by residual contamination. This pinning prevents the surface from smoothening thermally. The introduction of hydrogen to the surface promotes a chemical reaction which frees the pinned sites and allows thermal smoothening to proceed.

Copyright

References

Hide All
1. Calawa, A.R., Appl. Phys. Lett., 33, 12,1978.
2. Bozack, M.J., Choyke, W.J., Muehlhoff, L., J.T. Yates Jr., Surf. Sci., 176, 547, 1986.
3. Bozack, M.J., Taylor, P.A., Choyke, W.J. and Yates, J.T. Jr, Surf. Sci., 179, 132, 1987.
4. van Hove, J.M., Pukite, P.R. and Cohen, P.I., J. Vac. Sci. Tech. B3 563 (1985).
5. Surnev, L. and Tikhov, M., Surf. Sci., 123, 505, 1982.
6. Madix, R.J. and Susu, A.A., Surf. Sci, 20, 377, 1970.
7. Chason, E., Tsao, J.Y., Horn, K.M. and Picraux, S.T., J. Vac. Sci. Tech. B, in press.

Hydrogen Ion Beam Smoothening of Oxygen Roughened Ge(001) Surfaces

  • K. M. Horn (a1), E. Chason (a1), J. Y. Tsao (a1) and S. T. Picraux (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed