Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-18T10:11:35.792Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Diffusion in the Hydrogen Collision Model of Amorphous Silicon Metastability

Published online by Cambridge University Press:  15 February 2011

Howard M. Branz
Howard M. Branz*
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, hbranz@nrel.gov
Get access

Abstract

The trap-controlled model of H diffusion that underpins the H collision model of amorphous silicon metastability provides new insight into thermal and light-enhanced H diffusion in a-Si:H. The longstanding puzzle of the linear DB-dependence of diffusion coefficient with doping is resolved. Expressions for the light-induced H diffusion coefficient are derived with and without D-for-H exchange reactions. It is shown that D-for-H exchange does not affect the long-time diffusion coefficient that is measured under illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 377
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Branz, H. M., Solid State Commun. 105/6, 387 (1998).Google Scholar
2. Branz, H. M., in Amorphous and Microcrystalline Silicon Technology-1998, 507, edited by Wagner, S., Hack, M., Branz, H. M., Schropp, R., and Shimizu, I. (Materials Research Society, Pittsburgh, 1998), p. 709.Google Scholar
3. Branz, H. M., Phys. Rev. B 59, 5498 (1999).Google Scholar
4. Yelon, A., Fritzsche, H., and Branz, H. M., unpublishedGoogle Scholar
5. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
6. Branz, H. M., Asher, S., Gleskova, H., and Wagner, S., Phys. Rev. B 59, 5513 (1999).Google Scholar
7. Branz, H. M., Asher, S. E., Xu, Y., and Kemp, M., in Amorphous Silicon Technology-1995, 377. edited by Hack, M., Schiff, E. A., Madan, A., Powell, M., and Matsuda, A. (Materials Research Society, Pittsburgh, 1995), p. 331.Google Scholar
8. Kemp, M. and Branz, H. M., Physical Review B 52, 13946 (1995).Google Scholar
9. Branz, H. M., Asher, S. E., and Nelson, B. P., Phys. Rev. B 47, 7061 (1993).Google Scholar
10. Kemp, M. and Branz, H. M., Phys. Rev. B 47, 7067 (1993).Google Scholar
11. Street, R. A., Tsai, C. C., Kakalios, J., and Jackson, W. B., Phil. Mag. B 56, 305 (1987).Google Scholar
12. Branz, H. M., Phys. Rev. B 39, 5107 (1989).Google Scholar
13. Pierz, K., Fuhs, W., and Mell, H., Phil Mag B 63, 123 (1991).Google Scholar
14. Pierz, K., Fuhs, W., and Mell, H., J. Non-Cryst. Solids 114, 651 (1989).Google Scholar
15. Muller, G., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M. J., Taylor, P. C., LeComber, P. G., and Hamakawa, Y. (Materials Research Society, Pittsburgh, 1988), p. 321.Google Scholar
16. Biswas, R., Li, Q., Pan, B. C., and Yoon, Y., Phys. Rev. B 57, 2253 (1998).Google Scholar