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Hydrogen Diffusion in the Hydrogen Collision Model of Amorphous Silicon Metastability

Published online by Cambridge University Press:  15 February 2011

Howard M. Branz
Howard M. Branz*
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, hbranz@nrel.gov
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Abstract

The trap-controlled model of H diffusion that underpins the H collision model of amorphous silicon metastability provides new insight into thermal and light-enhanced H diffusion in a-Si:H. The longstanding puzzle of the linear DB-dependence of diffusion coefficient with doping is resolved. Expressions for the light-induced H diffusion coefficient are derived with and without D-for-H exchange reactions. It is shown that D-for-H exchange does not affect the long-time diffusion coefficient that is measured under illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 377
Copyright
Copyright © Materials Research Society 1999

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