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Hydrogen Diffusion Duringc Amorphous Silicon Growth and Its Consequences for the Transition to Nanocrystalline Growth
Published online by Cambridge University Press: 17 March 2011
Abstract
Using a closed-form, time-dependent solution to the partial differential equation representing hydrogen diffusion in the frame of a growing silicon film we obtain considerable insight into processes controlled by mobile H in silicon. We apply this insight to quantitatively explain the limiting thickness for Si homoepitaxy and explain by analogy the incubation thickness before the transition from amorphous to nanocrystalline silicon growth.
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- Copyright © Materials Research Society 2001
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