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Hydrogen Diffusion Duringc Amorphous Silicon Growth and Its Consequences for the Transition to Nanocrystalline Growth

Published online by Cambridge University Press:  17 March 2011

Richard S. Crandall  and
Jack Thiesen
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Jack Thiesen
Affiliation:
Technology Applications, Boulder, CO 80301
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Abstract

Using a closed-form, time-dependent solution to the partial differential equation representing hydrogen diffusion in the frame of a growing silicon film we obtain considerable insight into processes controlled by mobile H in silicon. We apply this insight to quantitatively explain the limiting thickness for Si homoepitaxy and explain by analogy the incubation thickness before the transition from amorphous to nanocrystalline silicon growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A27.2.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Thiesen, J., Branz, H.M., and Crandall, R.S., Appl Phys Lett, 77, 3589, (2000).Google Scholar
2. Carlslaw, H. and Jaeger, J., Conduction of Heat in Solids, 2nd ed London: Oxford University Press, London, (1959).Google Scholar
3. Collins, R. W. et al. , Thin Solid Films, 364, 129, (2000).10.1016/S0040-6090(99)00925-6Google Scholar
4. Asoka-Kumar, P. et al. , Phys Rev. B, 51, 4630, (1999).Google Scholar
5. Eaglesham, D. J., Gossman, H.J., and Cerullo, M., Phys. Rev. Lett., 65, 1227, (1990).10.1103/PhysRevLett.65.1227Google Scholar