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Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

Published online by Cambridge University Press:  10 February 2011

S. S. He ,
V. L. Shannon  and
T. Nguyen
S. S. He
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, Washington USA
V. L. Shannon
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, Washington USA
T. Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, Washington USA
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Abstract

PECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 109
Copyright
Copyright © Materials Research Society 1997

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References

1. Kuo, Y., J. Electrochem. Soc., Vol.142, No. 7, July 1995, p. 2486.Google Scholar
2. Ibaraki, N., Shimano, T., Fukuda, F., Matsumura, K., Suzuki, K., Toeda, H. and Takikawa, O., Conf. Record 91 Int. Display Research Conf, San Diego, CA, p. 97–100.Google Scholar
3. Robertson, J., Phil. Mag., B63, p.47 (1991).Google Scholar
4. He, S.S. and Shannon, V.L., MRS Vol.377, p. 337.Google Scholar
5. He, S.S. and Shannon, V. L., Proceedings of the Fourth ICSICT '95, Beijing, PRC.Google Scholar
6. Stein, H.J., Wells, V. A., Hamphy, R. E., J. Electrochem. Soc. 126, 1750, (1979).Google Scholar
7. Tsu, D. V., Lucovsky, G. and Mantini, M.J., Phy. Rev., V. 33, No 10, p. 7069.Google Scholar
8. Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., and Crubatyj, W., Phy. Rev. B, V. 28, No. 6, p. 3234.Google Scholar