Skip to main content Accessibility help
×
Home

HVPE GaN with Low Concentration of Point Defects for Power Electronics

  • M. A. Reshchikov (a1), J.D. McNamara (a1), A. Usikov (a2) (a3), H. Helava (a2) and Yu. Makarov (a2)...

Abstract

We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.

Copyright

References

Hide All
1. Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., Ueno, M., Katayama, K., Kiyama, M., and Nakamura, T., Appl. Phys. Express 3, 081001 (2010).
2. Wang, Y., Xu, H., Alur, S., Sharma, Y., Tong, F., Gartland, P., Issacs-Smith, T., Ahyi, C., Williams, J., Park, M., Wheeler, G., Johnson, M., Allerman, A. A., Hanser, A., Paskova, T., Preble, E. A., and Evans, K. R., Phys. Stat. Sol. (c) 8, 2430 (2011).
3. Reshchikov, M. A. and Morkoç, H., J. Appl. Phys. 97, 061301 (2005).
4. Reshchikov, M. A., Usikov, A., Helava, H., and Makarov, Yu., Appl. Phys. Lett. 104, 032103 (2014).
5. Paskov, P. P., Monemar, B., Paskova, T., Preble, E. A., Hanser, A. D., and Evans, K. R., Phys. Stat. Sol. (c) 6, S763 (2009).
6. Polyakov, A. Y., Lee, I.-H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., and Pearton, S. J., J. Appl. Phys. 109, 123701 (2011).
7. Freitas, J. A. Jr., Mastro, M. A., Glaser, E. R., Garces, N. Y., Lee, S. K., Chung, J. H., Oh, D. K., and Shim, K. B., J. Crystal Growth 350, 27 (2012).
8. Garces, N. Y., Feigelson, B. N., Freitas, J. A. Jr., Kim, J., Myers-Ward, R., and Glaser, E. R., J. Crystal Growth 312, 2558 (2010).
9. Reshchikov, M. A., Demchenko, D. O., Usikov, A., Helava, H., and Makarov, Yu., Carbon defects as sources of the yellow and green luminescence bands in GaN grown by HVPE, Phys. Rev. B, in press (2014).
10. Demchenko, D. O., Diallo, I. C., and Reshchikov, M. A., Phys. Rev. Lett. 110, 087404, 15 (2013).
11. Monemar, B., Paskov, P. P., Tuomisto, F., Saarinen, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., and Kimura, S., Physica B 376377, 440 (2006).
12. Reshchikov, M. A., Appl. Phys. Lett. 88, 202104 (2006).
13. Reshchikov, M. A., Foussekis, M. A., McNamara, J. D., Behrends, A., Bakin, A., and A.Waag, Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Zn and Si, J. Appl. Phys. 111, 073106, 112 (2012).
14. Reshchikov, M. A., Kvasov, A., McMullen, T., Bishop, M. F., Usikov, A., Soukhoveev, V., and Dmitriev, V. A., Phys. Rev. B 84, 075212 (2011).
15. Reshchikov, M. A., Foussekis, M. A., McNamara, J. D., Behrends, A., Bakin, A., and Waag, A., J. Appl. Phys. 111, 073106 (2012).
16. Reshchikov, M. A., J. Appl. Phys. 115, 103503 (2014).
17. Reshchikov, M. A., “Internal Quantum Efficiency of Photoluminescence in Wide-Bandgap Semiconductors”, Chapter in Photoluminescence: Applications, Types and Efficacy, Ed. Case, M. A. and Stout, B. C., Nova Science Publishers, Inc., New York, pp. 53120, 2012, ISBN: 978-1-61942-426-5.
18. Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 71, 2572 (1997).

Keywords

Related content

Powered by UNSILO

HVPE GaN with Low Concentration of Point Defects for Power Electronics

  • M. A. Reshchikov (a1), J.D. McNamara (a1), A. Usikov (a2) (a3), H. Helava (a2) and Yu. Makarov (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.