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HVEM and Electrical Characterisation of SIMOX Structures

Published online by Cambridge University Press:  28 February 2011

A. De Veirman ,
K. Yallup ,
J. Van Landuyt ,
H.E. Maes ,
K. De Meyer  and
L. Dupas
A. De Veirman
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020, Antwerpen, Belgium.
K. Yallup
Affiliation:
Analog Devices, c/o IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
J. Van Landuyt
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020, Antwerpen, Belgium.
H.E. Maes
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
K. De Meyer
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
L. Dupas
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
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Abstract

This paper reports on a study of the Silicon-On-Insulator (SOI) structures obtained by oxygen ion implantation (SIMOX) and subsequent thermal annealing. With Transmission Electron Microscopy (TEM) a novel defect structure is revealed in the case of low temperature annealings. Electrical measurements of test devices are performed and a correlation with impurity decoration of defects is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 129
Copyright
Copyright © Materials Research Society 1988

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References

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