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HRTEM Study of Structure and Evolution of Highly Mismatched Heteroepitaxial Interface, GaSe/GaAs(100)

Published online by Cambridge University Press:  10 February 2011

Z.R. Dai ,
S. R. Chegwidden  and
F. S. Ohuchi
Z.R. Dai
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, zrdai@u.washington.edu
S. R. Chegwidden
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, zrdai@u.washington.edu
F. S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195, zrdai@u.washington.edu
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Abstract

The microstructural evolution of the GaSe/GaAs(100) thin film system was characterized by high resolution transmission electron microscopy (HRTEM). The relationship of crystallographic orientation between the GaSe thin film and the GaAs substrate is [011]GaAs ‖ [1100]GaSe/(100)GaAs ‖ (0001)GaSe, with the dominant polytype for the GaSe thin film being a γ-type which has a 3R-rhombohedral structure with R3m space group. An intermediate layer was observed between the GaAs substrate and the GaSe thin film, with a structure distinct from that of either GaAs or GaSe. The result of a fast Fourier transform (FFT) of the lattice image corresponding to the intermediate layer indicated that its crystal structure was associated with that of α-Ga2Se3. A new vacancy ordered structural model of β-Ga2Se3 was suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 247
Copyright
Copyright © Materials Research Society 1998

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