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Hrtem Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport
Published online by Cambridge University Press: 15 February 2011
Abstract
The interface between 6H and 15R polytypes of silicon carbide, grown by Physical Vapor Transport, was studied by high-resolution transmission electron microscopy. The sample was investigated in cross-section cut perpendicular to the [11.0] irection. The atomic stacking sequence at the interface of the polytypes was determined. Polytype boundaries with orientations parallel and perpendicular to the 6H c-axis were investigated. Stacking faults associated with low angle grain boundaries in both 6H and 15R regions were observed and the 15R regions systematically showed a higher fault density than the 6H regions.
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- Copyright © Materials Research Society 1997