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Hrem Study of Heteroeprtaxial Interfaces in the TiO2/Al2O3 System

  • Y. Gao (a1), K. L. Merkle (a1), H. L. M. Chang (a1), T. J. Zhang (a1) and D. J. Lam (a1)...

Abstract

TiO2 thin films were grown epitaxially on (1120) sapphire (α-Al2O3) at 800 °C by the MOCVD method. The TiO2 films and TiO2/Al2O3 interfaces were characterized by TEM and HREM. The observations indicate that the TiO2 films are single crystalline and have the rutile structure. A majority of the films has the epitaxial orientation relationship between the TiO2 rutile films (R) and the α-Al2O3 substrates (S): (101)[010]R||(1120)[0001]S, while the epitaxial relationship of (100)[010]R||(1120)[0001]s has also been observed for one film. HREM studies show that the (100) film was grown on an off-cut substrate, vicinal to (1120). Detailed atomic structures of the interfaces will be presented and discussed in terms of the growth mechanism and misfit dislocation structure.

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1.Atomic Scale Structure of Interface”, edited by Bringans, R. D., Feenstra, R. M. and Gibson, J. M. (Mat. Res. Soc. Symp. Proc. 159, Pittsburgh, PA, 1989).
2.Layered Structures: Heteroepitaxy, Superlattices, Strain, and Metastability”, edited by Dodson, B. W., Schowalter, L. J., Cunningham, J. E. and Pollak, F. H. (Mat. Res. Soc. Symp. Proc. 160, Pittsburgh, PA, 1989).
3.Epitaxial Heterostructures”, edited by Shaw, D. W., Bean, J. C., Keramidas, V. G. and Peercy, P. S. (Mat. Res. Soc. Symp. Proc. 198, Pittsburgh, PA, 1990).
4. Wowchak, A. M., Kuznia, J. N. and Cohen, P. I., J. Vac. Sci. Technol. B 7, 733, (1989).
5. Chambers, S. A., J. Vac. Sci. Technol. B 7, 737, (1989).
6. Bauer, E. G., Dodson, B. W., Ehrlich, D. J., Feldman, L. C., Flynn, C. P., Geis, M. W., Harbison, J. P., Matyi, R. J., Peercy, P. S., Petroff, P. M., Phillips, J. M., Stringfellow, G. B. and Zangwill, A., J. Mater. Res., 5, 852, (1990).
7. Hyde, B. G. and Anderson, S., “Inorganic Crystal Structures” (John Wiley & Sons, New York, 1989).
8. Chang, H. L. M., Parker, J. C., You, H., Xu, J. J. and Lam, D. J., in “Chemical Vapor Deposition of Refractory Metals and Ceramics”, edited by Besmann, T. M. and Gallois, B. M. (Mat. Res. Soc. Symp. Proc. 168, Pittsburgh, PA), 343 (1989).
9. Gao, Y., Merkle, K. L., Chang, H. L. M., Zhang, T. J., Lam, D. J., submitted to Phil. Mag. A.

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