Skip to main content Accessibility help

Hrem Study of Heteroeprtaxial Interfaces in the TiO2/Al2O3 System

  • Y. Gao (a1), K. L. Merkle (a1), H. L. M. Chang (a1), T. J. Zhang (a1) and D. J. Lam (a1)...


TiO2 thin films were grown epitaxially on (1120) sapphire (α-Al2O3) at 800 °C by the MOCVD method. The TiO2 films and TiO2/Al2O3 interfaces were characterized by TEM and HREM. The observations indicate that the TiO2 films are single crystalline and have the rutile structure. A majority of the films has the epitaxial orientation relationship between the TiO2 rutile films (R) and the α-Al2O3 substrates (S): (101)[010]R||(1120)[0001]S, while the epitaxial relationship of (100)[010]R||(1120)[0001]s has also been observed for one film. HREM studies show that the (100) film was grown on an off-cut substrate, vicinal to (1120). Detailed atomic structures of the interfaces will be presented and discussed in terms of the growth mechanism and misfit dislocation structure.



Hide All
1.Atomic Scale Structure of Interface”, edited by Bringans, R. D., Feenstra, R. M. and Gibson, J. M. (Mat. Res. Soc. Symp. Proc. 159, Pittsburgh, PA, 1989).
2.Layered Structures: Heteroepitaxy, Superlattices, Strain, and Metastability”, edited by Dodson, B. W., Schowalter, L. J., Cunningham, J. E. and Pollak, F. H. (Mat. Res. Soc. Symp. Proc. 160, Pittsburgh, PA, 1989).
3.Epitaxial Heterostructures”, edited by Shaw, D. W., Bean, J. C., Keramidas, V. G. and Peercy, P. S. (Mat. Res. Soc. Symp. Proc. 198, Pittsburgh, PA, 1990).
4. Wowchak, A. M., Kuznia, J. N. and Cohen, P. I., J. Vac. Sci. Technol. B 7, 733, (1989).
5. Chambers, S. A., J. Vac. Sci. Technol. B 7, 737, (1989).
6. Bauer, E. G., Dodson, B. W., Ehrlich, D. J., Feldman, L. C., Flynn, C. P., Geis, M. W., Harbison, J. P., Matyi, R. J., Peercy, P. S., Petroff, P. M., Phillips, J. M., Stringfellow, G. B. and Zangwill, A., J. Mater. Res., 5, 852, (1990).
7. Hyde, B. G. and Anderson, S., “Inorganic Crystal Structures” (John Wiley & Sons, New York, 1989).
8. Chang, H. L. M., Parker, J. C., You, H., Xu, J. J. and Lam, D. J., in “Chemical Vapor Deposition of Refractory Metals and Ceramics”, edited by Besmann, T. M. and Gallois, B. M. (Mat. Res. Soc. Symp. Proc. 168, Pittsburgh, PA), 343 (1989).
9. Gao, Y., Merkle, K. L., Chang, H. L. M., Zhang, T. J., Lam, D. J., submitted to Phil. Mag. A.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed