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HREM of Epitaxial YBa2Cu3O7 Thin Films

Published online by Cambridge University Press:  21 February 2011

T. E. Mitchell ,
S. N. Basu ,
M. Nastasi  and
T. Roy
T. E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
S. N. Basu
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
M. Nastasi
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
T. Roy
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

Thin films of YBa2Cu3O7 have been prepared by evaporation of Cu, Y and BaF2 onto (001) SrTiO3, LaGaO3. and LaAlO3 and subsequent annealing. Their microstructures have been examined by HREM of cross-sectional specimens. Epitaxial (001) grains of YBa2Cu3O7 form near the substrate interface in thin films but (001) and (010) grains tend to nucleate as the film thickens. 90° grain boundaries are therefore common, as well as other defects such as small-angle boundaries, dislocations and stacking faults. HREM of the substrate/superconductor interface indicates regions of perfect epitaxy, highly distorted areas, amorphous regions and areas showing evidence of interdiffusion. The relationship of these microstructural features to critical current density is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 357
Copyright
Copyright © Materials Research Society 1990

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