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Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

  • Charles W. Teplin (a1), Howard M. Branz (a2), Kim M. Jones (a3), Manuel J. Romero (a4), Paul Stradins (a5) and Stefan Gall (a6)...

Abstract

During the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.

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Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

  • Charles W. Teplin (a1), Howard M. Branz (a2), Kim M. Jones (a3), Manuel J. Romero (a4), Paul Stradins (a5) and Stefan Gall (a6)...

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