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Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells

Published online by Cambridge University Press:  28 February 2011

W.M. Chen ,
P.O. Holtz ,
B. Monemar ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN Present address: Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, FRG.
M. Sundaram
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
A.C. Gossard
Affiliation:
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106, USA.
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Abstract

We report on a study of hot-carrier effects on optical properties of GaAs/AlxGa1-xAs quantum wells, by photoluminescence (PL) spectroscopy in the presence of a microwave (MW) field. Both doped and undoped, multiple quantum wells (MQWs) and single quantum wells (SQWs), grown by molecular beam epitaxy (MBE), show a profound enhancement of free exciton (FE) and bound exciton (BE) (for the doped wells) PL emissions with MW irradiation. This is attributed to effects of hot-carriers induced by the MW electric field. The mechanism responsible for the strong enhancement in PL intensity of the QWs in the presence of hot-carriers is studied, and is discussed in terms of an enhanced carrier trapping by the QWs as a consequence of the MW-induced heating of the photo-excited free carriers in the AlxGa1-xAs barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 707
Copyright
Copyright © Materials Research Society 1990

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References

1Ando, T., Fowler, A.B. and Stem, F., Rev. Mod. Phys. 54, 437 (1982).Google Scholar
2Yang, C.H., Carlson-Swindle, J.M., Lyon, S.A. and Warlock, J.J., Phys. Rev. Lett. 55, 2359 (1985).Google Scholar
3Kash, K., Shah, J., Block, D., Gossard, A.C. and Wiegmann, W., Physica B134, 189 (1985).Google Scholar
4Shah, J., Pinczuk, A., Gossard, A.C. and Wiegmann, W., Phys. Rev. Lett. 54, 2045 (1985).Google Scholar
5Cavenett, B.C. and Pakulis, E.J., Phys. Rev. B32, 8449 (1985).Google Scholar
6Holtz, P.O., Sundaram, M., Doughty, K., Merz, J.L. and Gossard, A.C., to be published in Phys. Rev. B.Google Scholar
7Schmidt, J. and Solomon, I., J. Appl. Phys. 37, 3719 (1966).Google Scholar
8Wittlin, A., Knap, W., Wilamowski, Z. and Grynberg, M., Solid State Commun. 36, 233 (1980).Google Scholar
9Baranov, P.G., Veshchunov, Yu.P., Zhitnikov, R.A., Romanov, N.G. and Shreter, Yu.G., JETP Lett. 26, 249 (1977).Google Scholar
10Romestain, R. and Weisbuch, C., Phys. Rev. Lett. 45, 2067 (1980).Google Scholar
11Wang, F.P., Monemar, B. and Ahlström, M., Phys. Rev. B39, 11195 (1989).Google Scholar
12Pakulis, E.J. and Northrop, G.A., Appl. Phys. Lett. 50, 1672 (1987).Google Scholar
13Godlewski, M., Weman, H., Wang, F.P., Monemar, B., Chen, W.M. and Zhao, Q.X., Mat. Res. Soc. Symp. Proc. Vol. 104, 117 (1988).Google Scholar
14Chen, W.M., Zhao, Q.X., Ahlström, M. and Monemar, B., in The Physics of Semiconductors, ed. Zawadzki, W. (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988) p.279.Google Scholar
15Goebel, E.O., Jung, H., Kuhl, J. and Ploog, K., Phys. Rev. Lett. 51, 1588 (1983).Google Scholar
16Chomette, A., Deveaud, B., Regreny, A. and Bastard, G., Phys. Rev. Lett. 57, 1464 (1986).Google Scholar