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Hot Jet Etching through Stencil Masks

  • M. W. Geis (a1), S. W. Pang (a1) and N. N. Efremow (a1)

Abstract

This article contains a description of hot jet etching through stencil masks. The dry etching technique does not damage the stencil mask, but anisotropically etches GaAs at rates as high as 10 μm min−1. Resolution less than 50 nm has been demonstrated. At present the etched surfaces are rough, but improvement of the etching technique may result in smooth surfaces.

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1. Geis, M. W., Efremow, N. N., and Lincoln, G. A., J. Vac. Sci. Technol. B4, 315 (1986).
2. Geis, M. W., Efremow, N. N., and Lincoln, G. A., J. Vac. Sci. Technol. B5, 363, (1987).
3. Gorowitz, B. and Saia, R. I., in VSLI Electronics Microstructure Science, edited by Einspruch, N. G. (Academic Press, New York, 1981), Vol.8, p. 297.
4. Geis, M. W., Lincoln, G. A., Efremow, N. N., and Piacentini, W. J., J. Vac. Sci. Technol. 19, 1390 (1980).
5. Randall, J. N., Flanders, D. C., Economou, N. P., Donnelly, J. P., and Bromley, E. I., J. Vac. Sci. Technol. B3, 58 (1985).
6. Pang, S. W., Lyszczarz, T. M., Chen, C. L., Donnelly, J. P., and Randall, J. N., J. Vac. Sci. Technol. B5, 215 (1987).

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