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Hopping of Electrons in Hybrid Band Tails of a-Si1-x Ge x :H

  • C. E. Nebel (a1), H. C. Weller (a1) and G.H. Bauer (a1)

Abstract

The thermalization of electrons in the medium temperature range (120K ≤ T ≤ 200K) is investigated by time-of-flight experiments on a-SiGe:H mim structures. The evaluation of the pre-transit current decay reveals a dual slope characteristic which reflects an initial hopping down (It −1) followed by a thermally activated (It p 0 < p < 1) process. The transition time from hopping down to multiple trapping sensitively depends on temperature and alloy composition. The experimentally deduced features can be explained by the increased tail state density at the conduction band mobility edge of a-SiGe:H samples compared to a-Si:H.

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Nebel, C.E., Bauer, G.H., Phil. Mag. B 52, 463 (1989).
[2] Nebel, C.E., Weller, H.C., Bauer, G.H., Proc. Mat. Res. Soc. 118, 507 (1988).
[3] Monroe, D., Phys. Rev. Lett. 54, 146 (1985).
[4] Stutzmann, M., J. Non-Cryst. Sol. 97&98, 105 (1987).
[5] Silver, M., Bässler, H., Phil. Mag. Lett. 56, 109 (1987).
[6] Kakalios, J., Street, R.A., Phys. Rev. B 34, 6014 (1986).
[7] Weller, H.C., Kessler, F., Lotter, E., Nebel, C.E., Paasche, S.M., Bauer, G.H., J. Non-Cryst. Sol. 97&98, 1071 (1987).
[8] Marshall, J.M., Street, R.A., Thompson, M.J., Phil. Mag. B 54, 51 (1986).
[9] Bauer, G.H., Nebel, C.E., Schubert, M.B., Schumm, G., Proc. Mat. Res. Soc. 149, 485 (1989).

Hopping of Electrons in Hybrid Band Tails of a-Si1-x Ge x :H

  • C. E. Nebel (a1), H. C. Weller (a1) and G.H. Bauer (a1)

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