Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-22T05:56:09.470Z Has data issue: false hasContentIssue false
  • English
  • Français

Homogenization of the Bilayers of Cu-Al Alloy and Pure Copper to Produce CU-0.3 at.% Al Alloy Films

Published online by Cambridge University Press:  10 February 2011

Pei-I Wang ,
S. P. Murarka ,
S. Bedell  and
W. A. Lanford
Pei-I Wang
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics and Electronic Manufacturing, Tory, NY
S. P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics and Electronic Manufacturing, Tory, NY
S. Bedell
Affiliation:
State University of New York at Albany, Dept. of Physics, Albany, NY.
W. A. Lanford
Affiliation:
State University of New York at Albany, Dept. of Physics, Albany, NY.
Get access

Abstract

Preparation of Cu-0.3 at.% Al alloy films by homogenization anneals of metallic bilayers consisting of Cu/Cu-AI on SiO2 is studied to produce advanced copper based metallization for future ICs. The bilayer films were annealed at temperature in the range of 200°C- 400°C and the depth profiles were obtained using Rutherford Backscattering technique. It is found that Al diffuses through the undoped copper layer to surface - leading to lower Al concentration in the original Al doped Cu layer and apparently increased concentration of Al in undoped Cu (not detectable by RBS). The resistivity of these annealed films ranged from 2.1 to 2.4 μΩ-cm depending on final Al concentration achieved. Electrical stability of such MOS capacitors was also investigated. All these results will be presented and discussed showing that Al-doped copper layers can be used as diffusion barrier/adhesion promoter between the oxide ILD and copper metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 281
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Murarka, S. P., Metallization-Theory and Practice for VLSI and ULSI, (Butterworth-Heinemann, Bosten, 1993).Google Scholar
2. Murarka, S. P., Hymes, S. W., Critical Reviews in Solid State Materials Science, 20, 87 (1995).Google Scholar
3. McBrayer, J. D., Swanson, R. M., Sigmon, T. W., J. Electrochm. Soc., 133, 1242 (1986).Google Scholar
4. Shacham-Diamand, Y., Dedhia, A., Hoffstetter, D., Oldham, W. G., J. Electrochem. Soc., 140, 2427 (1993).10.1149/1.2220837Google Scholar
3. Raghavan, G., Chiang, C., Anders, P. B., Tzeng, S., Villasol, R., Bai, G., Bohr, M., Fraser, D. B., Thin Solid Films, 262, 168 (1995).Google Scholar
6. Milines, A. G., Deep Impurities in Semiconductors, (John Wiley & Sons Inc., New York, 1973), p.14.Google Scholar
7. Nandan, R., Murarka, S. P., Pant, A., Shepard, C., Lanford, W. A., Mat. Res. Symp. Proc., 260, 929 (1992).10.1557/PROC-260-929Google Scholar
8. Ding, P. J., Wang, W., Lanford, W. A., Hymes, S., Murarka, S. P., Appl. Phys. Lett., 65, 1778 (1994).Google Scholar
9. Kirchner, E. J., PhD Thesis, Rensselaer Polytechnic Institute, 1996.Google Scholar
10. Lanford, W. A., Ding, P. J., Wang, W., Hymes, S., Murarka, S. P., Thin Solid Films, 262, 234 (1995).10.1016/0040-6090(95)05837-0Google Scholar
11. Ding, P. J., Lanford, W. A., Hymes, S., Murarka, S. P., J. Appl. Phys., 75, 3627 (1994).Google Scholar
12. Schröder, K., CRC Handbook of Electrical Resistivities of Binary Metallic Allys, (CRC Press Inc. Boca Raton, FL, 1983), p. 78.Google Scholar
13. Rhines, F. N., Mehl, R. F., Trans. AIME, 128, 185 (1938).Google Scholar
14. Matsuno, N., Oikawa, H., Met. Trans., 6A, 2191 (1975).Google Scholar
15. Zhu, L, King, B. V., O'Conner, D. J., Mulhen, E. Z., J. Appl. Phys., 29, 2564 (1996).Google Scholar
16. Hoffman, A., maniv, T., Folman, M., Surface science, 193, 57 (1998).Google Scholar
17. Pashusky, A., Folman, M., Surface science, 244, 197, (1991).Google Scholar
18. Poate, J. M., Tu, K. N., Mayer, J. W., Thin Film - Interdiffusion and Reactions, (John Wiley & Sons Inc., Princetion, New Jercy, 1978), p. 226.Google Scholar
19. Park, J. W, Pedraza, A. J., J. Mater. Res., 12, 3174 (1997).10.1557/JMR.1997.0414Google Scholar
20. Itow, H., Nakasaki, Y., Minamiihaba, G., Suguro, K., Okano, H., Appl. Phys. Lett., 63, 934 (1993).Google Scholar