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Homoepitaxial Growth of Crystalline Ge Films through a Liquid Metal Medium at Low Temperature

Published online by Cambridge University Press:  25 February 2011

Fulin Xiong ,
Jene A. Golovehenko  and
Frans Spaepen
Fulin Xiong
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
Jene A. Golovehenko
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
Frans Spaepen
Affiliation:
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, MA 02138
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Abstract

Crystalline films of Ge have been homoepitaxially grown through a liquid Au medium by the so-called vapor-liquid-solid (VLS) mechanism at relatively low temperature (400-450 °C). During the process, the Ge vapor is delivered by a molecular beam evaporator and the liquid phase in the system is formed at the interface by heating a Au metal film above its eutectic point with the semiconductor. This process has a potential of a high growth rate at low temperature. The growth process and the crystallinity of the films were monitored in situ by high energy ion backscattering and channeling. The surface morphology and quality of the films were examined by scanning electron microscopy and cross-sectional transmission electron microscopy. The experimental results are presented, together with a discussion of the growth mechanism and the nature of the liquid metal-semiconductor interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 265
Copyright
Copyright © Materials Research Society 1991

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References

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