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Hinge Sensitivity in a Micro-Rotating Structure for predicting Induced Thermo Mechanical Stress in Integrated Circuit Metal Interconnects

Published online by Cambridge University Press:  01 February 2011

J. M. M. dos Santos ,
K. Wang ,
S. M. Soare ,
S. J. Bull ,
A. B. Horsfall ,
N. G. Wright ,
A. G. O'Neill ,
J. G. Terry ,
A. J. Walton  and
A. M. Gundlach
...Show all authors
J. M. M. dos Santos
Affiliation:
School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, UK; J.M.dos-Santos@ncl.ac.uk
K. Wang
Affiliation:
School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, UK; J.M.dos-Santos@ncl.ac.uk
S. M. Soare
Affiliation:
School of Chemical Engineering and Advanced Materials, Herschel Building, University of Newcastle, Newcastle, NE1 7RU, UK
S. J. Bull
Affiliation:
School of Chemical Engineering and Advanced Materials, Herschel Building, University of Newcastle, Newcastle, NE1 7RU, UK
A. B. Horsfall
Affiliation:
School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, UK; J.M.dos-Santos@ncl.ac.uk
N. G. Wright
Affiliation:
School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, UK; J.M.dos-Santos@ncl.ac.uk
A. G. O'Neill
Affiliation:
School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, UK; J.M.dos-Santos@ncl.ac.uk
J. G. Terry
Affiliation:
Scottish Microelectronics Centre, Kings Buildings, University of Edinburgh, EH9 3JL, UK
A. J. Walton
Affiliation:
Scottish Microelectronics Centre, Kings Buildings, University of Edinburgh, EH9 3JL, UK
A. M. Gundlach
Affiliation:
Scottish Microelectronics Centre, Kings Buildings, University of Edinburgh, EH9 3JL, UK
J. T. M. Stevenson
Affiliation:
Scottish Microelectronics Centre, Kings Buildings, University of Edinburgh, EH9 3JL, UK
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Abstract

The process-induced stress in interconnects within integrated circuits (IC) has a direct influence on the mean time to failure of the devices. Since measurement of stress in individual metallised lines is not possible by existing techniques, another approach has been adopted where a test structure is generated during fabrication based on a micro-rotating cantilever sensor. To support the design, finite element modeling (FEM) has been performed. By comparing the rotation predicted by FEM simulations and that observed experimentally, a clear discrepancy is observed which is critically dependent on the details of the sensor design, the pattern transfer of the lithographic process and on the dry etching processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U10.10
Copyright
Copyright © Materials Research Society 2004

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References

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