Skip to main content Accessibility help
×
Home

High-Voltage Operation of Surface Barrier Silicon Detectors With a Side Groove

  • S. Ohkawa (a1), K. Husimi (a1), C. Kim (a2), Y. Kim (a2) and D. Itoh (a3)...

Abstract

A remarkable characteristic of the surface barrier detector with a side groove cooled down to the nitrogen temperature has been observed. That is an abrupt decrease of the output noise at a definite voltage in increasing the bias voltage slowly. This is caused by a carrier injection from the side surface of the groove near the neck narrowed by the side groove. This excess noise disappears after the depletion layer goes through the neck of the side groove. This is confirmed by the fact that the capacitance of the detector decreases abruptly with the decrease of the noise at the same bias voltage. This detector is capable to be operated at a voltage higher than this voltage with a low noise. The maximum bias voltage applied to the detector is 3000 V.

Copyright

References

Hide All
1. Llacer, J., IEEE Trans. Nucl. Sci., NS-II, No. 3, 221 (1964)
2. Goulding, F. S., Nucl. Instr. and Meth. 43, 1 (1966)
3. Llacer, J., IEEE Trans. Nucl. Sci., NS–13, No. 1, 93 (1966)
4. Fox, R. J. and Borkowski, C. J., IEEE Trans. Nucl. Sci., NS–9, No. 3, 213 (1962)
5. Ristinen, R. A., Lind, D. A. and Homan, J. L., Nucl. Instr. and Meth., 56, 55 (1967)
6. Malm, H. L. and Dinger, R. J., IEEE Trans. Nucl. Sci., NS–23, No. 1, 76 (1976)
7. Goulding, F. S., Nucl. Instr. and Meth., 142, 213 (1977)
8. Hessel, S., IEEE Trans. Nucl.Sci., NS–29, No. 1, 751 (1982)

High-Voltage Operation of Surface Barrier Silicon Detectors With a Side Groove

  • S. Ohkawa (a1), K. Husimi (a1), C. Kim (a2), Y. Kim (a2) and D. Itoh (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed