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High-Resolution X-Ray Characterization of Amorphous Semiconductor Multilayers

Published online by Cambridge University Press:  25 February 2011

P. D. Persans ,
A. F. Ruppert ,
B. Abeles ,
G. Hughes  and
K. S. Liang
P. D. Persans
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy NY 12180
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Company, Annandale NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Annandale NJ 08801
G. Hughes
Affiliation:
Exxon Research and Engineering Company, Annandale NJ 08801
K. S. Liang
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy NY 12180
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Abstract

We discuss high-resolution x-ray diffraction measurements on a-Si:H/a-Ge:H periodic amorphous multilayers. Analysis of the data using the dynamical theory yields information on layer thicknesses and densities, interface and surface roughness, and structural defects such as layer thickness fluctuations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 711
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Persans, P.D., Abeles, B., Scanlon, J., and Stasiewski, H., in Proc. of the 17th International Conference on the Physics of Semiconductors, ed. J.D. Chadi and W.A. Harrison, (Springer-Verlag, New York, 1985), 499.CrossRefGoogle Scholar
2. Conde, J.P., Shen, D.-S., Campbell, I.H., Fauchet, P.M., and Wagner, S., Mat. Res. Soc. Symp. Proc. Vol.77, (Materials Research Society, Pittsburgh, 1987), 629.Google Scholar
3. Prokes, S.M. and Spaepen, F., Appl. Phys. Lett., 47, 234, (1985).CrossRefGoogle Scholar
4. Gonzalez-Hernandez, J., Allred, D.D., Nguyen, O.V., Martin, D., and Pawlik, D., Mat. Res. Soc. Symp. Proc. Vol.56, (Materials Research Society, Pittsburgh, 1986), 389.Google Scholar
5. Kakalios, J., Fritzsche, H., Ibaraki, N., and Ovshinsky, S.R., J. Non-Cryst. Sol., 66, 339, (1984).CrossRefGoogle Scholar
6. Abeles, B., Tiedje, T., Liang, K.S., Deckman, H.W., Stasiewski, H.C., Scanlon, J.C., and Eisenberger, P.M., J. Non-Cryst. Sol. 66, 351, (1984).CrossRefGoogle Scholar
7. Roxlo, C. and Abeles, B., Phys. Rev. B, 34, 2522, (1986).CrossRefGoogle Scholar
8. Underwood, J.H. and Barbee, T.W. Jr. in Low Energy X-ray Diagnostics, ed. Atwood, D.T., and Henke, B.L., American Institute of Physics Conference Proceedings no. 75, p.170, (1981).Google Scholar
9. Pardo, B. and Andre, J.M., Rev. Phys. Applique, 23, xxxx (1988.)Google Scholar
10. Boite, M.G. Le, Traverse, A., Nevot, L., Pardo, B., and Corno, J., J.Mat. Res., 3, 1089, (1988).CrossRefGoogle Scholar
11. Micelli, P.F., Neumann, D.A. and Zabel, H., Appl. Phys. Lett., 48, 24, (1986).CrossRefGoogle Scholar
12. Ruppert, A.F., Persans, P.D., Abeles, B., Hughes, G., and Liang, K.S., submitted for publication.Google Scholar