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High-Rate Growth of Stable a-Si:H

Published online by Cambridge University Press:  15 February 2011

T. Takagi ,
R. Hayashi ,
A. Payne ,
W. Futako ,
T. Nishimoto ,
M. Takai ,
M. Kondo  and
A. Matsuda
T. Takagi
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN, ttakagi@etl.go.jp
R. Hayashi
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
A. Payne
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
W. Futako
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
T. Nishimoto
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
M. Takai
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, JAPAN
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Abstract

Correlation between the gas phase species in silane plasma measured by mass spectrometry and the properties of hydrogenated amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapour deposition (PECVD) has been investigated. We have especially been interested in the higher-order silane related species in the plasma, whose contribution to the film growth is considered to be the cause of light-induced degradation in the film quality, especially at high growth rate. In this study, we varied excitation frequency, gas pressure and power density to vary the growth rates of a-Si:H films ranging from 2 Å/s to 20 Å/s.

Molecular density ratio of trisilane, representative of higher silane related radicals, to monosilane has shown a clear correspondence to the fill factor after light soaking of Schottky cells fabricated on the resulting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 105
Copyright
Copyright © Materials Research Society 1999

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References

1. Matsuda, A. and Tanaka, K., Thin Solid Films 92, 171 (1982).Google Scholar
2. Nakamura, N., Takahama, T., Isomura, M., Nishikuni, M., Yoshida, K., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Jpn. J. Appl. Phys. 28, 1762 (1989).Google Scholar
3. Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1992).Google Scholar
4. Lucovsky, G., Nemanich, R. J. and Knights, J. C., Phys. Rev. B 19, 2064 (1978).Google Scholar
5. Hailer, I., Appl. Phys. Lett. 37, 282 (1980).Google Scholar
6. Turban, G., Catherine, Y. and Grolleau, B., Thin Solid Films 67, 309 (1980).Google Scholar
7. Fortmann, C. M., Lange, S., Farley, M. and O'Dowd, J., Proc. IEEE Photovoltaic Spec. Conf. 19th, 296 (1987).Google Scholar
8. Watanabe, Y., Shiratani, M., Kawasaki, H., Singh, S., Fukuzawa, T., Ueda, Y. and Ohkura, H., J. Vac. Sci. Technol. A 14 (1996) 540.Google Scholar