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High-Quality Transparent Conducting Oxide Films Deposited by a Novel Ion Plating Technique

Published online by Cambridge University Press:  01 February 2011

T. Sakemi ,
S. Shirakata ,
K. Iwata ,
K. Matsubara ,
H. Tampo ,
P. Fons ,
S. Niki ,
K. Awai  and
T. Yamamoto
T. Sakemi
Affiliation:
Research & Development Center, Sumitomo Heavy Industries, Ltd., 5-2 Soubiraki-cho, Niihama, Ehime 792-8588, Japan
S. Shirakata
Affiliation:
Facility of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan
K. Iwata
Affiliation:
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
K. Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
H. Tampo
Affiliation:
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
P. Fons
Affiliation:
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
S. Niki
Affiliation:
National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
K. Awai
Affiliation:
Sumiju Technical Center Co., Ltd., 5-2 Soubiraki-cho, Niihama, Ehime 792-8588, Japan
T. Yamamoto
Affiliation:
Department of Electronic and Photonic System Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan
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Abstract

A novel ion plating technique that has the attributes of both superb controllability of the high density plasma used as well as ion beam shape has been developed and applied to the deposition of transparent conducting oxides. The advantages of this technique include reduced ion damage, scale-up capability, in-plane uniformity, the use of low growth temperatures and fast deposition rates suggesting that the technique is very promising for a variety of applications such as solar cells and organic device fabrication. Gallium doped zinc oxide films have been deposited on glass substrates at 200°C. Resistivities as low as ρ∼2.7×10-4 Ω-cm with high transparency have been demonstrated. In addition, this technique has been successfully applied to large area deposition such as 65 cm × 55 cm-sized glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B7.4
Copyright
Copyright © Materials Research Society 2003

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References

Referrences

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