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High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

  • T. Baba (a1), T. Matsuyama (a1), T. Sawada (a1), T. Takahama (a1), K. Wakisaka (a1) and S. Tsuda (a1)...

Abstract

We succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

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High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

  • T. Baba (a1), T. Matsuyama (a1), T. Sawada (a1), T. Takahama (a1), K. Wakisaka (a1) and S. Tsuda (a1)...

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