Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-21T06:37:36.692Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

Published online by Cambridge University Press:  11 February 2011

Alexander Demchuk ,
Don Olson ,
Minseub Shin ,
Dan Olson ,
Peter Nussbaum ,
Andy Strom ,
Simon Bates ,
Frank Hofmann  and
Gordon Munns
Alexander Demchuk
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Don Olson
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Minseub Shin
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Dan Olson
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Peter Nussbaum
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Andy Strom
Affiliation:
now with Hysitron, Inc., 5251 W. 73rd Street, Minneapolis, MN 55439
Simon Bates
Affiliation:
Bede Scientific, 14 Inverness Drive East, Suite –100, Englewood, CO 80112, U.S.A.
Frank Hofmann
Affiliation:
Bede Scientific, 14 Inverness Drive East, Suite –100, Englewood, CO 80112, U.S.A.
Gordon Munns
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Get access

Abstract

We report on device quality Al0.28Ga0.72N/GaN heterostructures growth by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using intermediate AlxGa1-xN/GaN superlattices (SL) with x<0.15. High-quality Al0.28Ga0.72N/GaN heterostructures have been confirmed with HRXRD analysis by measurement of mosaic twist and tilt in growth films, SEM with selective etching and Van der Pauw Hall measurements. The edge and threading dislocations were efficiently filtered by the AlGaN/GaN SL resulting in further reduction dislocation densities at the channel. Additionally, the superlattice served to improve the planarity of the channel heterointerface as evidenced by x-ray and AFM analysis. The increase of 2-DEG mobility from ∼1187 cm2/V s to ∼1443 cm2/V s was obtained at the carrier density of 1.0 to 1.2×1013 cm−2 on heterostructures with intermediate AlGaN/GaN SL grown on sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L9.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Khan, M. A., Bhattarai, A., Kuznia, J. N., Olson, D. T., Appl. Phys. Lett., 63, 1214 (1993).Google Scholar
2. Wu, Y. –F., Kapolnek, D., Ibvbetson, J. P., Parikh, P., Keller, B. P., and Mishra, U. K., IEEE Electron Device Lett. 48, 586, (2001).Google Scholar
3. Zhang, Y. and Singh, J., J. Appl. Phys. 85, 587 (1999).Google Scholar
4. Lester, S. D., Ponce, F. A., Craford, M. G., Steigerwald, D. A., Appl. Phys. Lett. 66, 1249 (1995).Google Scholar
5. Heying, B., Tarsa, E. J., Elsass, C. R., Fini, P., DenBarrs, S. P., Speck, J. S., J. Appl. Phys. 85, 6470 (1999).Google Scholar
6. Nam, O., Bremser, M. D., Zheleva, T. S., Davis, R. F., Appl. Phys. Lett. 71, 2638 (1997).Google Scholar
7. Hirayama, H., Ainoya, M, Kinoshita, A., Hirata, A., Aoyagi, Y., Appl. Phys. Lett. 80, 2057 (2002).Google Scholar
8. Kusakabe, K., Kishino, K., Kikuchi, A., Yamada, T., Sugihara, D., Nakamura, S., J. Crystal Growth 230, 387 (2001).Google Scholar
9. Khan, M. A., Kuznia, J. N., Van Hove, J. M., Olson, D. T., Krishnankutty, S., Kolbas, R. M., Appl. Phys. Lett. 58, 526 (1991).Google Scholar
10. Weyher, J. L., Brown, P. D., Rouviere, J. L., Wosinski, T., Zauner, A. R. A. and Grzegory, I., J. Crystal Growth 210, 151 (2000).Google Scholar
11. U.S.A. Patent 6,192,103.Google Scholar
12. Williamson, G. K. and Hall, W. H., Acta Metall. 1, 22 (1953).Google Scholar
13. Metzger, T., Hoppler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Chrstiansen, S., Albrecht, M., and Strunk, H. P., Phys. Stat. Solid. A 77, 1013 (1998).Google Scholar
14. Wang, H.-M., Zhang, J.-P., Chen, C.-Q., Fareed, Q., Yang, J.-W. and Khan, M. A., Appl. Phys. Lett. 81, 604 (2002).Google Scholar
15. Bates, S., J. Appl. Phys. (2002) will be published.Google Scholar
16. Munns, G. et al., MRS Internet J. Nitride Semicond. Res. (2003) will be published.Google Scholar