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High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

  • Chih-Hsiang Lin (a1), S. J. Murry (a1), Rui Q. Yang (a1), S. S. Pei (a1), H. Q. Le (a2), Chi Yan (a3), D. M. Gianardi (a3), D. L. McDaniel (a4) and M. Falcon (a4)...

Abstract

Stimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

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Corresponding author

* also with Applied Optoelectronics Inc., Houston, Texas 77081

References

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