Skip to main content Accessibility help
×
Home

Highly Strained InAsxPl-X/InP Quantum wells Prepared by Flow Modulation Epitaxy

  • R. P. Schneider (a1) and B. W. Wessels (a1)

Abstract

Flow modulation techniques have been used to prepare highly strained InAsxPl-x/InP quantum well structures in an atmospheric pressure organometallic vapor phase epitaxial reactor. The compositions of the pseudomorphic wells ranged from x=0.40 to 0.74, corresponding to biaxial compressive strains of 1.3-2.4%. Well thicknesses ranged from 2 to 26 monolayers. The flow modulation growth conditions were found to have a strong influence on interface formation in the wells. For wells grown under optimized modulation conditions, low-temperature photoluminescence spectra revealed peak-splitting of the emission from the thinnest wells. This splitting is attributed to emission from regions in the wells with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. The full-width at half-maximum of the peaks is in the 6-15 meV range, comparable to the best reported values for lattice- matched InGaAs(P)/InP quantum wells grown by any technique, and is independent of well thickness or composition.

Copyright

References

Hide All
1. Wang, T. Y., Fry, K. L., Persson, A., Reihlen, E. H. and Stringfellow, G. B., Appl. Phys. Lett. 52, 290 (1988).
2. Thijs, P. J. A., Montie, E. A., Kesteren, H. W. van and 'tHooft, G. W., Appl. Phys. Lett. 53, 971 (1988).
3. Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).
4. Schaffer, W. J., Lind, M. D., Kowalczyk, S. P. and Grant, R. W., J. Vac. Sci. Technol. B1, 688 (1983).
5. Nomura, T., Maeda, Y., Miyao, M., Hagino, M. and Ishikawa, K., Jpn. J. Appl. Phys. 26, 908 (1987).
6. Schneider, R. P. Jr, and Wessels, B. W., Appl. Phys. Lett. 54, 1142 (1989).
7. Adams, A. R., Electron. Lett. 22, 249 (1986).
8. Yablanovitch, E. and Kane, E. O., IEEE J. Lightwave Technol. 6, 1292 (1988).
9. Huang, K. and Wessels, B. W., J. Appl. Phys. 60, 4342 (1986).
10. Schneider, R. P. Jr, Li, D. X. and Wessels, B. W., J. Electrochem. Soc., to be published; Heteroepitaxial Approaches in Semiconductors, ed. Macrander, A. (Electrochemical Society, New Jersey), in press.
11. Fukui, T. and Kobayashi, N., J. Cryst. Growth 71, 9 (1985).
12. Huang, K. and Wessels, B. W., J. Cryst. Growth 92, 547 (1988).
13. Wang, P. J. and Wessels, B. W., Appl. Phys. Lett. 44, 766 (1984).
14. Schneider, R. P. Jr, and Wessels, B. W., Superlattices and Microstructures, in press.
15. Bastard, G., Phys. Rev. B 24, 5693 (1981).
16. Alavi, K., Pearsall, T. P., Forrest, S. R. and Cho, A. Y., Electron. Lett. 19, 226 (1983).
17. Asai, H. and Oe, K., J. Appl. Phys. 54, 2052 (1983).
18. Ji, G., Huang, D., Reddy, U. K., Henderson, T. S., Houdre', R. and Morkoc, H., J. Appl. Phys. 62, 3366 (1987).
19. Razeghi, M. and Duchemin, J. P., J. Cryst. Growth 70, 145 (1983).
20. Panish, M. B., Temkin, H., Hamm, R. A. and Chu, S. N. G., Appl. Phys. Lett. 49, 164 (1986).
21. Tsang, W. T. and Schubert, E. F., Appl. Phys. Lett. 49, 220 (1986).
22. Miller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H. and Capik, R. J., Appl. Phys. Lett. 49, 1384 (1986).
23. Carey, K. W., Hull, R., Fouquet, J. E., Kellert, F. G. and Trott, G. R., Appl. Phys. Lett. 51, 910 (1987).
24. Madhukar, A., in Epitaxy of Semiconductor Layered Structures, edited by Tung, R. T., Dawson, L. R. and Gunshor, R. L., (Mat. Res. Soc. Symp. Proc. 102, 1988) p. 3, and references therein.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed