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Highly Sensitive Analysis for Valence Band Edge of C60 Films by Total Yield Photoelectron Spectroscopy

Published online by Cambridge University Press:  22 February 2011

S. Gonda ,
M. Kawasaki ,
T. Arakane  and
H. Koinuma
S. Gonda
Affiliation:
Research Laboratory Engineering Materials, Tokyo Institute of Technology
M. Kawasaki
Affiliation:
Research Laboratory Engineering Materials, Tokyo Institute of Technology PRESTO-JRDC, 4259 Nagatsuta, Midori-ku, Yokohama 227, JAPAN
T. Arakane
Affiliation:
Research Laboratory Engineering Materials, Tokyo Institute of Technology
H. Koinuma
Affiliation:
Research Laboratory Engineering Materials, Tokyo Institute of Technology
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Abstract

We have in-situ measured the density of states (DOS) around the top of valence band of pristine C60 films by means of total yield photoelectron spectroscopy. The top of valence band (TVB) of C60 was located at 5.00eV below the vacuum level. Considerable amplitude of gap states was observed up to 0.9eV above the TVB. Kelvin probe method revealed that the Fermi level of amorphous C60 film was located at 0.47eV above the TVB. The improvement of crystallinity in C60 films, which induced the increase in electrical conductivity as well, increased the DOS above the TVB. The electric conduction of C60 films cannot be explained with a simple picture for carrier conduction in semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

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References

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