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Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

  • Juan Paolo Bermundo (a1), Yasuaki Ishikawa (a1), Haruka Yamazaki (a1), Toshiaki Nonaka (a2) and Yukiharu Uraoka (a1)...

Abstract

Polysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

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1. Kamiya, T., Nomura, K., and Hosono, H., Sci. Technol. Adv. Mater., 11, 044305 (2010).
2. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature, 432, 488 (2004).
3. Park, J. S., Maeng, W.-J., Kim, H.-S., and Park, J.-S., Thin Solid Films, 6, 1679 (2012).
4. Park, J.-S., Kim, T.-W., Stryakhilev, D., Lee, J.-S.. An, S.-G., Pyo, Y.-S, Lee, D.-B, Mo, Y. G., Jin, D.-U. and Chung, H. K., Appl. Phys. Lett., 95, 013503 (2009)
5. Fortunato, E., Barquinha, P., and Martins, R., Adv. Mater., 24, 2945 (2012)
6. Kang, D. H., Lim, H., Kim, C. J., Song, I. H., Park, J. C., and Park, Y. S., Appl. Phys. Lett., 90, 192101 (2007).
7. Lee, K.-H., Jung, J. S., Son, K. S., Park, J. S., Kim, T. S., Choi, R., Jeong, J. K., Kwon, J.-Y., Koo, B., and Lee, S., Appl. Phys. Lett., 95, 232106 (2009).
8. Park, J.-S., Jeong, J. K., Chung, H.-J., Mo, Y.-G., and Kim, H. D., Appl. Phys. Lett., 92, 072104 (2008).
9. Jeong, J. K., Yang, H. W., Jeong, J. H., Mo, Y.-G., and Kim, H. D., Appl Phys. Lett., 93, 123508 (2008).
10. Mativenga, M., Choi, J. W., Hur, J. H., Kim, H. J., and Jang, J., Journ. of Info. Disp., 12, 47 (2011).
11. Ahn, C. H., Senthil, K., Cho, H. K., Lee, S. Y., Nature Sci. Rep., 3, 2737 (2013)
12. Choi, S.-H., and Han, M.-K., IEEE Electron Device Lett., 33, 396 (2012).
13. Arai, T., Morosawa, N., Tokunaga, K., Terai, Y., Fukumoto, E., Fujimori, T., Nakayama, T., Yamaguchi, T. and Sasaoka, T., SID Symposium Digest of Tech. Papers, 41, 1033 (2010).
14. Choi, S.-H., Jang, J.-H., Jang-Joo, K., and Han, M.-K., IEEE Elect. Dev. Lett., 33, 381 (2012)
15. Bermundo, J. P., ishikawa, Y., Yamazaki, H., Nonaka, T., and Uraoka, Y., ECS Journal of Solid Stat. Sci and Tech. (2013) (in press)
16. Barney, R. H., Itoh, M., Sakakibara, A., and Suzuki, T., Chem. Rev., 95, 1409 (1995).
17. Yuan, Q., Yin, G., and Zhaoyuan, N.: Plasma Sci. and Technol., 15, 86 (2013).
18. Chowdhury, M.D.H, Migliorato, P., and Jang, J., Appl. Phys. Lett., 97, 173506 (2010).

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