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Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions

  • Takayuki Shima (a1) (a2), Yunosuke Makita (a1), Shinji Kimura (a1), Hirokazu Sanpei (a1) (a3) and Yasuhiro Fukuzawa (a1) (a4)...

Abstract

Low-energy N2 + molecular-ions were irradiated during the epitaxial growth of GaAs. Ion acceleration energy and ion beam current density were varied in the range of 30-200 eV and 3-37 nA/cm2, respectively. GaAs growth rate was kept constant at 1µm/ h and the thickness of N-doped GaAs layer was about 1 µm. N concentration was obtained by using secondary ion mass spectroscopy. Strong N-related emissions were observed in the low-temperature photoluminescence spectra, which indicates that N atom is efficiently substituted at As site and is optically active as an isoelectronic impurity

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[1] Kondow, M., Nakatsuka, S., Kitatani, T., Yazawa, Y., and Okai, M., Jpn. J.Appl. Phys. 35, 5711(1996).
[2] Kondow, M., Uomi, K., Hosomi, K., and Mozume, T., Jpn. J. Appl. Phys. 33, L1056(1994).
[3] Uesugi, K. and Suemune, I., Jpn. J. Appl. Phys. 36, L1572(1997).
[4] Shima, T., Makita, Y., Kimura, S., Iida, T., Fang, X., Jiang, D., Kudo, K., and Tanaka, K., Nucl. Instr. and Meth. in Phys. Res. B120, 293(1996).
[5] Schwabe, R., Seifert, W., Bugge, F., Bindemann, R., Agekyan, V.F., and Pogarev, S.V., Solid State Commun. 55, 167(1985).
[6] lida, T., Makita, Y., Kimura, S., Winter, S., Yamada, A., Fons, P., and Uekusa, S., J. Appl. Phys. 77, 146(1995).
[7] Baldwin, D.A., Murray, P.T., and Rabalays, J.W., Chem. Phys. Lett. 77, 403(1981).
[8] Makimoto, T. and Kobayashi, N., Appl. Phys. Lett. 67, 688(1995).
[9] Shima, T., Makita, Y., Kimura, S., lida, T., Sanpei, H., Yamaguchi, M., Sandhu, A., and Hoshino, Y., Nucl. Instr. and Meth. in Phys. Res. B127/128, 437(1997).
[10] Shima, T., Makita, Y., Kimura, S., Sanpei, H., and Sandhu, A., Mater. Sci. Engineer. A (in press).
[11] Makimoto, T., Saito, H., Nishida, T., and Kobayashi, N., Appl. Phys. Lett. 70, 2984(1997).
[12] For example, Yamada, I., Nucl. Instr. and Meth. in Phys. Res. B112, 242(1996).
[13] Brice, D.K., Tsao, J.Y., and Picraux, S.T., Nucl. Instr. and Meth. in Phys. Res. B44, 68(1989).

Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions

  • Takayuki Shima (a1) (a2), Yunosuke Makita (a1), Shinji Kimura (a1), Hirokazu Sanpei (a1) (a3) and Yasuhiro Fukuzawa (a1) (a4)...

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