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Highly Doped P-Type, N-Type CdS Thin Films and Diodes

Published online by Cambridge University Press:  15 February 2011

Wen P. Shen  and
Hoi S. Kwok
Wen P. Shen
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
Hoi S. Kwok
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260 Department of Electrical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
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Abstract

CdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 329: Symposium R – New Materials for Advanced Solid State Lasers , 1993 , 173
Copyright
Copyright © Materials Research Society 1994

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