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Highly Doped P-Type and N-Type ZnS, ZnSe, CdS and CdSe Thin Films Growth by Pulsed Laser Deposition
Published online by Cambridge University Press: 22 February 2011
Abstract
ZnS, ZnSe, CdS and CdSe thin films were grown on InP or GaAs substrates with high ptype and n-type doping concentrations by pulsed excimer laser deposition without any postannealing processing. The x-ray diffraction results showed that these thin films were fully epitaxial (in-plane aligned). These high quality films are suitable for use as optoelectronic devices which will operate in the visible region of the spectrum.
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- Copyright © Materials Research Society 1994
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