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Highly Conductive p-type Microcrystalline Silicon Thin Films

Published online by Cambridge University Press:  10 February 2011

M. Heintze  and
M. Schmitt
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
M. Schmitt
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm−1 were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 277
Copyright
Copyright © Materials Research Society 1996

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