Skip to main content Accessibility help
×
Home

High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

  • C.-M. Zetterling (a1), M. östling (a1), L. Norin (a2) and U. Jansson (a2)

Abstract

Epitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500°C using co-evaporation of titanium (e-beam) and C60 (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 °C in a vacuum furnace, and electrical measurements were performed up to 300 °C.

    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
      Available formats
      ×

Copyright

References

Hide All
1. Pensl, G., Morkoc, H., Monemar, B. and Janzén, E., eds. Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum, 264–268 (Trans Tech Publications Ltd., Switzerland, 1998)
2. Maex, K. and van Rossum, M., eds. Properties of Metal Silicides, Emis Datareviews series, 14 (INSPEC, the Institution of Electrical Engineers, London, 1995)
3. Porter, L.M. and Davis, R.F., Mat. Sci. Eng. B 34, p. 83 (1995).
4. Lundberg, N., Östling, M., Tägtström, P. and Jansson, U., J. Electrochem. Soc. 143, p. 1662 (1996).
5. Lundberg, N., Tägtsträm, P., Jansson, U. and Ostling, M., presented at ECSCRM'96, Crete, Greece (1996).
6. Porter, L.M., Davis, R.F., Bow, J.S., Kim, M.J., Carpenter, R.W. and Glass, R.C., J. Mater. Res. 10, p. 668 (1995).
7. Waldrop, J.R. and Grant, R.W., Appl. Phys. Lett. 62, p. 2685 (1993).
8. Rudy, E., Compendium of Phase Diagram Data, Part V (Air Force Materials Lab., Wright- Patterson, AFB, Ohio, 1969).
9. Chaddha, A.K., Parsons, J.D. and Kruaval, G.B., Appl. Phys. Lett. 66, p. 760 (1995).
10. Zhao, Q.H., Parsons, J.D., Chen, H.S., Chaddha, A.K., Wu, J., Kruaval, G.B. and Downham, D., Mater. Res. Bull. 30, p. 761 (1995).
11. Norin, L., McGinnis, S., Jansson, U. and Carlsson, J.-O., J. Vac. Sci. Technol. A 15, p. 3082 (1997).
12. Nordell, N., Schbner, A. and Andersson, S.G., J. Electrochem. Soc. 143, p. 2910 (1996).
13. Berger, H.H., Solid-State Electronics 15, p. 145 (1972).
14. Norin, L., Lu, J., Jansson, U. and Malm, J.-O., to be published (1998).
15. Storms, E.K., MTP International Review of Science, Inorganic Chemistry Series One, ed. Roberts, L.E.J. (Butterworths, London, Vol.10, 1972).

High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

  • C.-M. Zetterling (a1), M. östling (a1), L. Norin (a2) and U. Jansson (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed