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High Temperature Performance, Reliability and Simulation of GaAs Mesfets with CVD Diamond Heat Sinks

Published online by Cambridge University Press:  25 February 2011

L. Zhu ,
Pin F. Tang  and
A. Christou
L. Zhu
Affiliation:
CALCE, Electronic Packaging Center, University of Maryland, College Park, MD 20742.
Pin F. Tang
Affiliation:
CALCE, Electronic Packaging Center, University of Maryland, College Park, MD 20742.
A. Christou
Affiliation:
CALCE, Electronic Packaging Center, University of Maryland, College Park, MD 20742.
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Abstract

An investigation of the temperature stability and high temperature characteristics of GaAs FETs on CVD diamond heat sinks was carried out by modeling the high temperature electrical characteristics for GaAs MESFETs and by experimentally measuring the elevated temperature performance. The thermal characteristics were determined experimentally using infrared microscopy techniques. The thermal measurements by infrared microscopy were correlated with results of a finite element analysis calculation of the GaAs FET thermal distribution. Reliability testing at 230°C resulted in an MTF of approximately 2000 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 911
Copyright
Copyright © Materials Research Society 1992

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References

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