Skip to main content Accessibility help
×
Home

High Temperature Ohmie Contacts for N-Tvpe Β-Sic Sensors

  • J. S. Sho (a1), R. A. Weber (a1), L. G. Provost (a1), D. Goldstein (a1) and A. D. Kurtz (a1)...

Abstract

In order to fabricate high temperature sensors and other devices, it is necessary to develop ohmic contact metallizations that can withstand elevated temperatures. A variety of ohmic contact metallizations were investigated with contact resistivity measured as a function of anneal time in air. The metallizations were based on Ti and W ohmic contacts, which have contact resistivities as low as 10-4 Ω-cm2. Several of the contact metallizations were stable after 10 hrs. at 650°C, while one system, based on a Ti ohmic contact, was able to withstand > 20 hrs. at 650°C with only a 30–40% increase in contact resistivity.

Copyright

References

Hide All
1. Powell, J. A., Matus, L. G., and Kuczmarski, M. A.: J. Electrochem. Soc. 134, 1558 (1987).
2. Carter, C. H., Tang, L., and Davis, R. F., presented at the Fourth National Review Meeting on the Growth and Characterization of SiC, Raleigh, NC, 1987.
3. Matus, L. G., Powell, J. A., Salupo, C. S.: Appl. Phys. Lett. 59, 1770 (1991)
4.SiC 1973” edited by Marshall, R. C., Faust, J. W. and Ryan, C. E.. Univ. of S. Carolina Press, p. 666.
5. Shor, J. S., Goldstein, D. and Kurtz, A. D., in “Amorphous and Crystalline SiC III, to be published by Springer-Verlag.
6. Shor, J. S., Goldstein, D., and Kurtz, A. D. in “Transducers 91' Digest of Technical Papers” p. 912916 (IEEE press, 1991).
7. Shor, J. S., Zhang, X. G. and Osgood, R. M.: to be published in J. Electrochem. Soc.
8. Shor, J. S., Kurtz, A. D. and Osgood, R. M.: to be published in Appl. Phys. Lett.
9. Kulite Semiconductor Products, Inc. Leonia, NJ.
10. Edmond, J. A., Ryu, J., Glass, J. T. and Davis, R. F.: J. Electrochem. Soc. 135, 359 (1988).
11. Bellina, J. J. and Zeller, M. V.: Mat. Res. Soc. Symp. 97, 265 (1987)
12. Geib, K. M., Wilson, C., Long, R. G., and Wilmsen, C. W.: J. Appl. Phys. 68, 2796 (1990)
13. McMullin, P. G., Spitznagel, J. A., Szedon, J. R. and Costello, J. A., to be published in“Amorphous and Crystalline SiC III” Springer-Verlag Press.
14. Terry, L. E. and Wilson, R. W.: Proc. IEEE 57, 1580 (1969).
15. Kuphal, E.: Solid State Electron. 24, 69 (1981).

High Temperature Ohmie Contacts for N-Tvpe Β-Sic Sensors

  • J. S. Sho (a1), R. A. Weber (a1), L. G. Provost (a1), D. Goldstein (a1) and A. D. Kurtz (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed