Hostname: page-component-7c8c6479df-995ml Total loading time: 0 Render date: 2024-03-28T10:40:55.946Z Has data issue: false hasContentIssue false

High Temperature Behavior of Polysilicon

Published online by Cambridge University Press:  11 February 2011

Chung-Seog Oh
Affiliation:
Department of Mechanical Engineering, Johns Hopkins University
George Coles
Affiliation:
Department of Mechanical Engineering, Johns Hopkins University
William N. Sharpe Jr
Affiliation:
Department of Mechanical Engineering, Johns Hopkins University
Get access

Abstract

The polysilicon elements of thermal actuators can reach temperatures high enough to cause permanent deformation. A fundamental understanding of the constitutive behavior is necessary for intelligent design and life prediction, but mechanical testing at high temperatures is especially challenging at the micron level.

This paper describes techniques for testing freestanding thin-film polysilicon specimens in tension at temperatures up to 700°C. Strain is measured directly on the specimens by laser interferometry from platinum markers. The complete stress-strain curve can be obtained as well as strain versus time for creep tests. Initial results show that polysilicon is ductile at temperatures above 500°C and can have a high creep rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Comtois, J. H. and Bright, V., Solid-State Sensors and actuators Workshop, Hilton Head, SC, 174177, (1996).Google Scholar
2. Conant, R. A. and Muller, R. S., DSC-Vol. 66, Micro-Electro-Mechanical Systems (MEMS), ASME, 273277 (1998).Google Scholar
3. Cragun, R. and Howell, L. L., MEMS-Vol. 1, Microelectromechanical Systems (MEMS), ASME, 181188, (1999).Google Scholar
4. Que, L., Otradovec, L., Oliver, A. D., and Gianchandani, Y. B., MEMS 2001, IEEE, (2001).Google Scholar
5. Kapels, H., Urscher, J., Aigner, R., Sattler, R., Wachutka, G., and Binder, J., Eurosensors XIII, 12B1, 379382, (1999).Google Scholar
6. Chiao, M. and Lin, L., J. Microelectromechanical Systems, 9, 146151, (2000).Google Scholar
7. Miller, D. C., Dunn, M. L., and Bright, V. M., SPIE Vol. 4558, 3244, (2001).Google Scholar
8. Sharpe, W. N. Jr, Eby, M.A., and Coles, G., Proc. Transducers '01, 13661369, (2001).Google Scholar
9. Sharpe, W. N. Jr, Bagdahn, J., Jackson, K., and Coles, G., Mechanical Properties of MEMS Structures, Kluwer Academic Press, in press (2003).Google Scholar
10. Sharpe, W. N. Jr, Yuan, B., and Edwards, R. L., J. Microelectromechanical Systems 6, 193199, (1997).Google Scholar