Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T20:35:33.199Z Has data issue: false hasContentIssue false
  • English
  • Français

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Published online by Cambridge University Press:  01 February 2011

R. Farrell ,
V. R. Pagán ,
A. Kabulski ,
Sridhar Kuchibhatla ,
J. Harman ,
K. R. Kasarla ,
L. E. Rodak ,
J. Hensel ,
P. Famouri  and
D. Korakakis
R. Farrell
Affiliation:
rfarrel1@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
V. R. Pagán
Affiliation:
vpagan@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
A. Kabulski
Affiliation:
akabulsk@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
Sridhar Kuchibhatla
Affiliation:
skuchibh@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
J. Harman
Affiliation:
jharman2@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
K. R. Kasarla
Affiliation:
kkasarla@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
L. E. Rodak
Affiliation:
lrodak@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
J. Hensel
Affiliation:
J.Hensel@NETL.DOE.GOV, National Energy Technology Laboratory, P.O. Box 880, Morgantown, WV, 26507-0880, United States
P. Famouri
Affiliation:
Parviz.Famouri@mail.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
D. Korakakis
Affiliation:
Dimitris.Korakakis@mail.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
Get access

Abstract

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Keywords

nitridepiezoelectricannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD06-18
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lee, J.W., Radu, I., Alexe, M., J. Materials Science, 13, 131–137, 2002).Google Scholar
2 Kano, Kazuhiko, Arakawa, Kazuki, Takeuchi, Yukihiro, Akiyama, Morito, Ueno, Naohiro, Kawahara, Nobuaki, Sensors and Actuators, A, 130–131, 397–402, 2006)Google Scholar
3 Fuflyigin, V., Salley, E., Osinsky, A., Norris, P., App. Phys. Letters, V. 77, 19, 2000)Google Scholar
4 Okada, Yasumasa, Tokumaru, Yozo, J. Appl. Phys. 56 (2), 1984)Google Scholar
5 Yim, W.M., Paff, R.J., J. Appl. Phys. 45(3), 1974)Google Scholar