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High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

  • C. Jaussaud (a1), J. Margail (a1), J. Stoemenos (a2) and M. Bruel (a1)

Abstract

High temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.

The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.

This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

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High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

  • C. Jaussaud (a1), J. Margail (a1), J. Stoemenos (a2) and M. Bruel (a1)

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