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High Temperature Annealing Behaviors of Luminescent Siox:H Films

  • Zhixun Ma (a1), Xianbi Xiang (a1), Shuran Sheng (a1), Xianbo Liao (a1), Chunlin Shao (a2) and Masayoshi Umeno (a2)...

Abstract

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170°C annealed films. The dependence of optical coefficients (μ) on photon energy (hv) near the absorption edge (Eg) is found to follow the square root law: (μhv)½ μ (Eg – hv), indicating that nano-Si embedded in Si02 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

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High Temperature Annealing Behaviors of Luminescent Siox:H Films

  • Zhixun Ma (a1), Xianbi Xiang (a1), Shuran Sheng (a1), Xianbo Liao (a1), Chunlin Shao (a2) and Masayoshi Umeno (a2)...

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