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High Tc YBa2Cu3O7−x Thin Films on GaAs-Based Substrate Using MgO Buffer Layers with Sb Passivation Technique 1

Published online by Cambridge University Press:  26 February 2011

M. Z. Tseng ,
W. N. Jiang ,
E. L. Hu  and
U. K. Mishra
M. Z. Tseng
Affiliation:
Department of Electrical and Computer Engineering and Department of Materials Engineering, University of California, Santa Barbara, CA 93106
W. N. Jiang
Affiliation:
Department of Electrical and Computer Engineering and Department of Materials Engineering, University of California, Santa Barbara, CA 93106
E. L. Hu
Affiliation:
Department of Electrical and Computer Engineering and Department of Materials Engineering, University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Department of Electrical and Computer Engineering and Department of Materials Engineering, University of California, Santa Barbara, CA 93106
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Abstract

High quality YBCO films have been grown on GaAs-based substrates via depositing MgO epitaxial buffer layers prior to YBCO growth. The critical temperature of the best YBCO film, Tc(0) was 87K and Jc>6.7×104 A/cm2 at 77K. The MgO buffer layers are usually [100] oriented along the normal of GaAs (100) substrates with full-width-half-maximum (FWHM) of rocking curve varying from 1–3 degree. We found that the uniformity and quality of MgO buffer layers are very sensitive to the pre-deposition preparation of GaAs-based substrates. Nonuniform MgO buffer layers are often obtained on those substrates prepared by wet chemical processing. Reproducible, controlled formation of the MgO buffer layer was achieved using an antimony passivation scheme, after molecular beam epitaxial (MBE) growth of the desired structure of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 271
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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