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A High Stability Electrode Technology for Stacked SrBi2Ta2O2 Capacitors

  • J. Kudo (a1), M. Nagata (a2), N. Ogata (a2), S. Yamazaki (a2), H. Urashima (a2), A. Okutoh (a2), T. Miyoshi (a2) and K. Ishihara (a2)...

Abstract

A high stability electrode technology with TaSiN as a barrier metal was used to fabricate a stacked SBT capacitor array on polySi plugs, and hysteresis characteristics and contact properties of the stacked capacitor were studied.

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1. Onishi, S., et al. , IEDM Digest of Technical Papers, p.843,1994
2. Kudo, J., et al. , IEDM Digest of Technical Papers, p.609,1997
3. Kolawa, E., et al. , IEEE Electron Devices Lett., vol. 12, no.6, P.321, 1991

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